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Low-threshold 1.3-µm InGaAsP/InGaAsP strained-layer quantum-well lasers with n-type modulation doping

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Abstract

Low-threshold current operation of a laser diode is important to reduce the power consumption of the diode itself and its driving circuit. One approach to reduce the threshold current is to use modulation-doped quantum-well structures as the active layers. The decrease of the transparent carrier density by n-type modulation doping, which leads to the reduction of threshold current, has been theoretically predicted [1] and recently experimentally demonstrated in GaAs/AlGaAs [2] and InGaAs/InAlGaAs [3] system. In this work, we studied 1.3-pm InGaAsP/InGaAsP strained-layer quantum-well lasers with n-type modulation doping and obtained very low threshold current density.

© 1994 Optical Society of America

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