Recent advances in subpicosecond generation and amplification with semiconductor lasers have shown the necessity of extending and modifying existing theoretical models1 to include phenomena influencing subpicosecond pulse amplification. To model subpicosecond pulse evolution in semiconductor laser amplifiers (SLA), spectral dependence of both real and imaginary parts of the complex susceptibility (index and gain) within the pulse bandwidth must be included. In addition to the well known gain saturation and selfphase modulation (SPM) due to carrier depletion1, it is necessary to account for the recently observed rapid gain and phase dynamics which have been attributed to carrier heating2. The effects of an instantaneous nonlinear index n2 must also be included.

© 1993 Optical Society of America

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