Abstract

Recent advances in subpicosecond generation and amplification with semiconductor lasers have shown the necessity of extending and modifying existing theoretical models1 to include phenomena influencing subpicosecond pulse amplification. To model subpicosecond pulse evolution in semiconductor laser amplifiers (SLA), spectral dependence of both real and imaginary parts of the complex susceptibility (index and gain) within the pulse bandwidth must be included. In addition to the well known gain saturation and selfphase modulation (SPM) due to carrier depletion1, it is necessary to account for the recently observed rapid gain and phase dynamics which have been attributed to carrier heating2. The effects of an instantaneous nonlinear index n2 must also be included.

© 1993 Optical Society of America

PDF Article
More Like This
Subpicosecond Pulse Amplification in Semiconductor Laser Amplifiers

M. Y. Hong, Y. H. Chang, A. Dienes, J. P. Heritage, and P. J. Delfyett
CPD5 Conference on Lasers and Electro-Optics (CLEO) 1993

Femtosecond Pulse Amplification and Cross-Phase Modulation in Semiconductor Laser Amplifiers-Theory and Experiment

A. Dienes, J. P. Heritage, M. Y. Hong, R. S. Grant, and P. J. Delfyett
SaC2 Optical Amplifiers and Their Applications (OAA) 1995

Ultrafast Gain Dynamics in Semiconductor Amplifiers

J. Mark and J. Mørk
TUC1 Optical Amplifiers and Their Applications (OAA) 1993

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription