Abstract

Field-induced refractive index change (Electro-refraction;ER) in multi-quantum well (MQW) structures arising from QCSE have become increasingly attractive for applications, especially in high speed, long-haul optical transmission systems. Because they have potential for low chirp, high speed modulation and for opto-electronic integration.[1,2]., Recently, highly efficient and small size MQW Mach-Zehnder(MZ) modulator had been reported[3]. However, the reports on the modulation characteristics had concentrated into the modulation characteristics for TE-like mode of the waveguide structure. Their polarization and wavelength dependences have not been fully revealed yet. In this paper, we describe an ER dependence on incident light wavelengths and polarizations to an InGaAs/InAlAs MQW MZ modulator operating at 1.55µm wavelength region.

© 1992 Optical Society of America