Abstract

Semiconductor ring lasers are attractive, by the nature of their geometry, for short pulse generation through active mode-locking and colliding pulse mode-locking (CPM) [1]. However, to date, only CW operation of small diameter ring lasers in GaAs has been demonstrated [2,3]. Recent advances in InP fabrication technology have enabled the realization of complex photonic integrated circuits using multiple quantum well (MQW) active regions and low-loss passive waveguides [4]. Using these techniques, we have fabricated an 3.0-mm diameter InGaAsP MQW ring laser which is actively mode-locked at 9.0 GHz producing nearly transform limited 27 ps optical pulses.

© 1992 Optical Society of America