Abstract
Improved velocity matching in LiNbO3 modulators has been achieved by several workers [1-4], using a combination of relatively thick (≥ 1 µm) SiO2 buffer layers and thick (typically ≥ 10 µm) plated electrodes. Utilizing this combination, microwave indices ≤ 2.5 have been achieved. However, increase in electrode thickness lowers device impedance, which raises drive power requirements and causes mismatch to most common 50 Ω sources. This decrease is partially compensated by the thicker buffer layer and by employing large gaps (typically 15 μm) between the hot and ground electrode(s), both of which maintain the impedance at a high value. They also increase the drive voltage, however, resulting in a larger voltage-length product relative to conventional modulators. To achieve closer velocity matching would require additional increases in electrode/buffer thicknesses, resulting in even higher voltages.
© 1992 Optical Society of America
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