Abstract

Vertical-cavity surface emitting lasers (VCSEL's) are promising light sources for optical computing and interconnection due to their unique topology and two-dimensional array capacity. To date, VCSEL's with monolithic distributed Bragg reflectors (DBR's) require current injection through the upper p- type DBR resulting in a large threshold voltage due to the concomitant series resistance. The voltage drop in the p-type DBR also leads to additional thermal effects which degrade the VCSEL performance.¹ Various methods, such as introducing extra layers with intermediate composition into the quarterwave DBR² or tapered doping in the p-type DBR,³ have provided a reduction in the series resistance, but have lead to complicated DBR designs. We have developed a novel VCSEL structure, utilizing dry etching, in situ metallization, and ion implantation, which can avoid current injection through the upper DBR, and thus simplifies the required epilayers.

© 1992 Optical Society of America