Abstract

Quantum wire (QWR) semiconductor lasers, grown by organometallic chemical vapor deposition (OMCVD) on nonplanar substrates, exhibit two dimensional (2D) quantum confinement^1-2 and sub-mA threshold currents ³. The in situ formation of the wires in these lasers eliminates excessive nonradiative recombination at their interfaces, which is essential for the efficient operation of these devices. One of the expected advantages of QWR heterostructures is the enhanced optical gain and absorption resulting from the increased density of states at the quasi-ID subbands. This feature would make QWR heterostructures useful for applications in low power consumption integrated optoelectronics. Here, we report the first measured gain and absorption spectra of QWR lasers.

© 1992 Optical Society of America