Dependence of Silicon-On-Insulator Waveguide Loss on Lower Oxide Cladding Thickness

Adam Mock; John D. O’Brien

doi:10.1364/IPNRA.2008.IWG4

Integrated Photonics and Nanophotonics Research and Applications
(Optica Publishing Group, 2008),
paper IWG4
•https://doi.org/10.1364/IPNRA.2008.IWG4

Dependence of Silicon-On-Insulator Waveguide Loss on Lower Oxide Cladding Thickness

Adam Mock and John D. O’Brien

Integrated Photonics and Nanophotonics Research and Applications 2008

Boston, Massachusetts United States
13–16 July 2008
ISBN:

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Waveguide Components (IWG)

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A. Mock and J. D. O’Brien, "Dependence of Silicon-On-Insulator Waveguide Loss on Lower Oxide Cladding Thickness," in Integrated Photonics and Nanophotonics Research and Applications, (Optica Publishing Group, 2008), paper IWG4.

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Abstract

Silicon-on-insulator waveguide propagation and bending loss as a function of lower oxide cladding thickness is investigated using the finite-difference time-domain method. Certain non-rectangular waveguide cross-sections can reduce substrate loss.

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