Abstract

We report on room temperature third order optical nonlinearity in the spectral region around 1.5 µm of GaN/AlN quantum wells (e1-e2 intersubband transition) and quantum dots (s-pz intraband transition). These transitions show a high value of third-order susceptibility, in the order of 10−7 esu, and an ultrafast nature of the nonlinear response, with recombination times in the order of 100 fs. The combination of both results render GaN/AlN nanostructures particularly suitable for all-optical switching and wavelength conversion applications in the spectral region of wavelength-division multiplexed transmission.

© 2008 Optical Society of America

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