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Conferences > IONT > 2012 > IF4A > IF4A.09

The Influence of V/III and Nucleation Layer on AlN films grown by MOCVD

Y.Y. Ding, H. Wang, W.Y. Yan, W. Tian, Y. Li, Y. Tian, J.N. Dai, Z.H. Wu, Y.Y. Fang, and C.Q. Chen

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Abstract

The influence of the V/III and nucleation layer (NL) on surface of AlN epilayer grown on sapphire have been investigated. The AlN layer with two step of reduced V/III exhibits a smooth surface morphology with RMS of 0.313nm. For AlN layer without NL, the twisting is reduced due to large grain size, while the surface of the AlN layer is rough owing to the mixing of crystallographic polarity.

© 2012 Optical Society of America

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