Er:YAG microchip for lasing in spectral range 2.94 µm and gain switching generation

Richard Švejkar; Jan Šulc; Helena Jelínková

doi:10.1364/EUVXRAY.2020.JW1A.25

OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS)
OSA Technical Digest (Optica Publishing Group, 2020),
paper JW1A.25
•https://doi.org/10.1364/EUVXRAY.2020.JW1A.25

Er:YAG microchip for lasing in spectral range 2.94 µm and gain switching generation

Richard Švejkar, Jan Šulc, and Helena Jelínková

High Intensity Lasers and High Field Phenomena 2020

Washington, DC United States
16–20 November 2020
ISBN: 978-1-943580-73-6

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Joint Poster Session II (JW1A)

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R. Švejkar, J. Šulc, and H. Jelínková, "Er:YAG microchip for lasing in spectral range 2.94 µm and gain switching generation," in OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS), L. Assoufid, P. Naulleau, M. Couprie, T. Ishikawa, J. Rocca, C. Haefner, G. Sansone, T. Metzger, F. Quéré, M. Ebrahim-Zadeh, A. Helmy, F. Laurell, and G. Leo, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper JW1A.25.

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Abstract

Highly doped Er:YAG microchip was prepared to make laser resonator compact and generate short pulses in gain switching regime. Pulse duration 306 ns with peak power 7 W and repetition rate 400 Hz were reached.

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