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InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

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Abstract

We report low noise, sub-kHz linewidth operation of a compact AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL), designed for InGaN-diode-pumping at 44X nm. We achieve 150 mW at 689 nm, suitable for cooling neutral Strontium optical clocks.

© 2020 The Author(s)

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