Add to BibSonomyAbstract
GaAs metal-semiconductor-metal photodetector epitaxially grown on Si is demonstrated. The growth of GaAs is carried out using low temperature ultra-thin Ge interlayers. Results show a remarkable photoresponsivity value of (0.54 ± 0.15) A/W at 5 V reverse bias, and 850 nm.
© 2020 The Author(s)
PDF Article | Presentation VideoMore Like This
Integration of Metal- GaAs -Metal Photodetectors on Si using Thin Ge Buffer Layers for Applications in Visible Photonics
Ghada Dushaq and Mahmoud Rasras
ce_10_5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2019
Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-stamping: Towards Light Sources on Silicon
Ghada Dushaq and Mahmoud Rasras
STh4H.3 CLEO: Science and Innovations (CLEO:S&I) 2020
High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers
S. A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, and J. Van Campenhout
Th3C.1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2018