Abstract

A low-loss silicon rib waveguide crossing with low polarization dependence loss is proposed. The insertion loss for TE (TM) polarization mode is -0.14 dB (-0.29 dB) and the crosstalk is -28 dB (-30 dB) at 1550 nm. The footprint of this device is around 8×8 μm2.

© 2019 The Author(s)

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