We demonstrate broadband and gate-tunable conducting oxide epsilon-near-zero perfect absorbers grown by atomic layer deposition. Absorption bandwidth (> 90%) of 214 nm for Berreman mode in NIR region is realized.

© 2018 The Author(s)

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription