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Combined Atomic Force Microscopy and Photoluminescence Imaging to Increase the Yield of Quantum Dot Photonic Devices

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Abstract

We present a combined optical and AFM characterization technique that determines whether single InAs/GaAs quantum dots appear in proximity to (up to micron-sized) topographic surface features that can be detrimental to quantum photonic device performance.

© 2017 Optical Society of America

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