Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > FiO > 2016 > FTu3F > FTu3F.2

Tailoring the Optical Properties of Boron Doped μc-Si:H Thin Films by Changing the SiH4/H2 Ratio Using RF-PECVD Process

Ghada Dushaq, Ammar Nayfeh, and Mahmoud Rasras

Not Accessible

Your library or personal account may give you access

Abstract

This paper depicts the effect of SiH4/H2 dilution ratio (R) on the structural and optical properties of amorphous silicon matrix with embedded microcrystals of silicon. The thin films are prepared using standard RF-PECVD process at substrate temperature of 25° C.

© 2016 Optical Society of America

PDF Article
More Like This
Structural and photoelectronic properties of a-SiGe:H thin films with varied Ge prepared by PECVD

Rui Xu, Wei Li, Jian He, Kang-Cheng Qi, and Ya-Dong Jiang
83120Q Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

Jian He, Wei Li, Rui Xu, Kang-Cheng Qi, and Ya-Dong Jiang
831206 Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Influence of Gas Partial Pressure on the Optoelectronic and Structural Properties of Si, SiC and SiGe Films by PECVD

William W. Hernández-Montero and Carlos Zúñiga-Islas
JW4A.43 Fourier Transform Spectroscopy (FTS) 2016

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use