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Conferences > FBTA > 2014 > JF2A > JF2A.35

Enhancement the deep-ultraviolet emission from the Mg-doped AlGaN/AlN multiple quantum wells pumped by an electron beam

Y. L. Li, X. J. Wang, W. Y. Qiu, S. M. He, B. Zhang, C. Q. Chen, and W. Lu

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Abstract

The origin of the two emission peaks located at ~242 nm and ~282 nm from Al0.65Ga0.35N/AlN multiple quantum wells (MQWs) structure with Al0.75Ga0.25N caplayer excited by an electron beam are investigated by using depth cathodoluminescence techniques. We observed an enhancement of deep-ultraviolet emission peak (~282 nm) intensities from MQWs by Mg doping.

© 2014 Optical Society of America

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