Abstract
Single atomic defects in hexagonal boron nitride (hBN) are particularly interesting due to their stability of emission and absence of blinking and bleaching, at ambient conditions [1]. Furthermore, they show exceptional robustness of emission, even at high temperatures of operation [2]. Therefore, hBN defects have emerged as promising candidates for novel robust single photon sources [1]. Several attempts have been done to induce hBN defects in a controlled manner [3,4]. Because of their ease of accessibility and, due to the nanometer scale thickness of the hBN flakes, these defects are attractive to couple to plasmonic structures in order to increase their photon emission [5,6].
© 2019 IEEE
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