Abstract

Lead halide perovskite semiconductors have recently gained interest for their application in a wide range of different optoelectronic devices, demonstrating impressive performances in solid-state photovoltaic devices [1] with impressive efficiencies exceeding 20% and great potential for lighting and lasing application [2,3]. These materials not only show exceptional primary optoelectronic properties such as a direct bandgap,[4] small exciton binding energy,[5] low carrier recombination rates,[6] ambipolar transport,[7] and tunability of the bandgap range from the near-infrared (NIR)[8] to the ultraviolet,[9] they are also very attractive for their low cost, easy processability for mass production (e.g., printing from solution)[10] and for a large availability of their chemical components.

© 2017 IEEE