Abstract

In recent years, colour centres in diamond have demonstrated the ability to fulfil the requirements for practical single photon sources, such as room temperature operation, photostability and high brightness. Among these single photon sources, Silicon-Vacancy (SiV) centres attracted attention due to their narrow emission, predominantly into a zero-phonon-line (ZPL) at 738 nm of only 5 nm width at room temperature. In previous studies, however, SiV centres suffered from an unfavourable low emission rate of only around 1000 cps [1].

© 2011 IEEE