Abstract
Ultrashort laser pulses allow us to do the real-time observation of carrier and phonon dynamics [1, 2]. Under the resonant excitation, the strong coupling between carriers and coherent phonons in Si is observed in time-domain [1]. By using photon below the direct band gap (~3.4 eV), we excite Si non-resonantly from the valence band and the conduction band in p- and n-type Si, respectively. We observe an opposite effect between p- and n-type doping on the dephasing dynamics of coherent phonons.
© 2009 IEEE
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