Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • CLEO/Europe and EQEC 2009 Conference Digest
  • (Optica Publishing Group, 2009),
  • paper EG_P4

Dephasing dynamics of coherent phonons in heavily doped Si under non-resonant photoexcitation

Not Accessible

Your library or personal account may give you access

Abstract

Ultrashort laser pulses allow us to do the real-time observation of carrier and phonon dynamics [1, 2]. Under the resonant excitation, the strong coupling between carriers and coherent phonons in Si is observed in time-domain [1]. By using photon below the direct band gap (~3.4 eV), we excite Si non-resonantly from the valence band and the conduction band in p- and n-type Si, respectively. We observe an opposite effect between p- and n-type doping on the dephasing dynamics of coherent phonons.

© 2009 IEEE

PDF Article
More Like This
GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics

Amlan Basak, Muneaki Hase, Masahiro Kitajima, and Hrvoje Petek
QFN4 Quantum Electronics and Laser Science Conference (CLEO:FS) 2008

Phonon Dynamics in Photoexcited Bismuth

D. M. Fritz, J. Wahlstrand, D. A. Reis, E. D. Murray, and S. Fahy
JThE122 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005

Coherent Control of Carrier and Phonon Dynamics in Photoexcited Bismuth

Yu-Hsiang Cheng, Yi Gao, and Keith Nelson
FTh3F.3 CLEO: QELS_Fundamental Science (CLEO:FS) 2017

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved