Abstract

Mid-infrared optical source and the detection technologies have numbers of important practical values and prospects in many fields such as remote sensing, medical, environmental protection and military. The main methods of producing Mid-infrared optical sources, at present, are optical parametric oscillator, quantum cascade and ceramic. Physi CAL theoretically got the transformation near 100%, from the near infrared light(~ 1064 nm) to the mid-infrared one(~ 3.53 um) utilizing LiNbO3 crystals which doped of MgO , based on the adiabatic difference frequency method. Then we used the three cascade different frequency KTP crystals, getting the 3.8 um wavelength light in the output, from the digital simulation, nearly 100% of the transformation was realized theoretically.

It is a great task for us to achieve the integrate of the infrared sensor with silicon base, and the discovery of black silicon provides a novel way to achieve it. The external quantum efficiency is beyond 100%, on accounting of the extreme gain. We think that the combination of quantum confinement effect and doping of sulfur is responsible for the gain, based on the analyzing of massive works of other groups previous. We also tried to model the black silicon diode and already have built up the models of black silicon solar cell, in which three levels and four levels system is used.

© 2015 Optical Society of America

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