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High-mesa Ridge/BH Hybrid Structure Optical Gating Device based on Cross-Absorption Modulation of Electro-absorption Modulator

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Abstract

We developed an optical gating device using a bulk layer and high mesa ridge/BH hybrid structure with input power of 14.5 dBm. The shortest gating width of 3.9 ps was obtained in all-optical sampling experiments.

© 2011 Optical Society of America

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