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Conferences > ECEOC > 2012 > P2 > P2.15

1.3 µm InAs/GaAs Quantum Dot Lasers on Si Rib Structures with Current Injection across Direct-Bonded GaAs/Si Heterointerfaces

Katsuaki Tanabe, Katsuyuki Watanabe, and Yasuhiko Arakawa

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Abstract

A 1.3 µm room-temperature InAs/GaAs quantum dot laser on a Si rib structure is demonstrated. The laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation, realizing current injection through the Si rib.

© 2012 Optical Society of America

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