Abstract

Low voltage vertical short channel OFET is realized by designing novel device structure without high resolution photolithographic patterning. Soluble pentacene precursor 13,6-N-sulfinylacetamidopentacene based low cost spin coating technique is used to design thin channel OFET using 3M Kapton scotch tape for masking. Device novelty provides fully encapsulated pentacene active layer from environment using sheet type electrodes. High output current of 5mA is achieved under 1volt with channel length of 350nm. AFM scanning shows dendritic pentacene structure growth after annealing at 200°C.

© 2011 Optical Society of America

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