Abstract

We developed a program for optimizing the electron-beam dosages to correct the proximity effect of electron scattering and the nonlinear resist characteristics in development. The proximity effect was calculated by a Monte Carlo method, and the resist profile after development was estimated by a resist process simulator with the cell removal model. The fabricated grating using the optimized dose distribution had a good blazed profile, which was better than that of a conventional correction method based on a resist contrast curve. Especially our correction method is valid for gratings with small periods (<10µm) and deep grooves (>1µm).

© 2000 Optical Society of America