A model-based optical metrology concept is presented that can be used for measuring the shape and position of resist features in the production of Memory and Logic devices. A few application examples are presented that demonstrate the capabilities of this concept.

© 2011 Optical Society of America

PDF Article
More Like This
Resist-Based Neutral Atom Lithography

J. H. Thywissen, K. S. Johnson, R. Younkin, N. H. Dekker, K. K. Berggren, A. P. Chu, and M. Prentiss
CB4 Symposium on Electro-Optics: Present and Future (SEO) 1998

Simple analytic modeling of photoresist development profiles in evanescent-field optical lithography

Jae Yong Lee and Eun Seong Lee
J418 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2011

Metrologies Supporting EUV Lithography

Patrick Naulleau
AM2K.1 CLEO: Applications and Technology (CLEO_AT) 2016


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription