Abstract

GaAs photodiodes with self-embedded graphene quantum dots and antireflection texture are formed by one-step etching. An enhancement of photocurrent and photoresponsivity (9.31mA/W) by ~22X and ~25X, respectively, with respect to the planar counterpart is demonstrated.

© 2021 The Author(s)

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Germanium photodiodes on pyramidal textured surface by Metal-Assisted Chemical Etching

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