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Selective area heteroepitaxy of antiphase boundary free GaAs microridges on on-axis (001) Si for silicon photonics

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Abstract

Low defect density gallium arsenide microridges were selectively grown on patterned (001) silicon. Antiphase boundaries were eliminated by bending and self-annihilation, enabled by low temperature nucleation and subsequent growth temperature optimization.

© 2021 The Author(s)

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