Abstract

We demonstrate 5 dB of net gain at 1558 nm in a 6.7 cm long erbium-doped tellurium- oxide-coated silicon nitride waveguide, in a process compatible with silicon nitride photonic integrated circuits.

© 2020 The Author(s)

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More Like This
High Gain Erbium Doped Tellurium Oxide Waveguide Amplifier Oxide Waveguide Amplifier

K. Vu and S. Madden
CJ8_4 The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2011

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Khu Vu and Steve Madden
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Khadijeh Miarabbas Kiani, Henry C.Franki, Richard Mateman, Arne Leinse, Andrew P. Knights, and Jonathan D. B. Bradley
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