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Erbium-Doped Tellurium-Oxide-Coated Silicon Nitride Waveguide Amplifiers

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Abstract

We demonstrate 5 dB of net gain at 1558 nm in a 6.7 cm long erbium-doped tellurium- oxide-coated silicon nitride waveguide, in a process compatible with silicon nitride photonic integrated circuits.

© 2020 The Author(s)

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