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High-efficiency photo detection at 2 µm realized by GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructure

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Abstract

Photon-trapping microstructure was designed and incorporated into GeSn/Ge multiple-quantum-well photodetectors to enhance the optical absorption. A four times higher responsivity of 0.11 A/W was achieved at a wavelength of 2 μm.

© 2020 The Author(s)

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