Non-volatile integrated photonic memory using GST phase change material on a fully etched Si3N4/SiO2 waveguide

A. Manolis; J. Faneca; J. Faneca; T. Domínguez Bucio; A. Baldycheva; A. Miliou; F. Y. Gardes; N. Pleros; C. Vagionas

doi:10.1364/CLEO_SI.2020.STh3R.4

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper STh3R.4
•https://doi.org/10.1364/CLEO_SI.2020.STh3R.4

Non-volatile integrated photonic memory using GST phase change material on a fully etched Si₃N₄/SiO₂ waveguide

A. Manolis, J. Faneca, T. Domínguez Bucio, A. Baldycheva, A. Miliou, F. Y. Gardes, N. Pleros, and C. Vagionas

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Phase Change Material Devices (STh3R)

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A. Manolis, J. Faneca, T. D. Bucio, A. Baldycheva, A. Miliou, F. Y. Gardes, N. Pleros, and C. Vagionas, "Non-volatile integrated photonic memory using GST phase change material on a fully etched Si3N4/SiO2 waveguide," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper STh3R.4.

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Abstract

We experimentally demonstrate an integrated photonic non-volatile memory using GST phase change material on a fully etched Si₃N₄/SiO₂-cladded waveguide for lower switching power and CMOS-compatibility, reporting interchangable switching from amorphous to crystalline state.

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