Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers Using Co as a Sacrificial Catalyst Layer

Fangzhu Xiong; Weiling Guo; Yibo Dong; Le Wang; Zaifa Du; Jie Sun

doi:10.1364/CLEO_SI.2020.SM4R.5

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper SM4R.5
•https://doi.org/10.1364/CLEO_SI.2020.SM4R.5

Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers Using Co as a Sacrificial Catalyst Layer

Fangzhu Xiong, Weiling Guo, Yibo Dong, Le Wang, Zaifa Du, and Jie Sun

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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F. Xiong, W. Guo, Y. Dong, L. Wang, Z. Du, and J. Sun, "Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers Using Co as a Sacrificial Catalyst Layer," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper SM4R.5.

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Abstract

Co acts as both an etching mask and a catalyst for the growth of grapheme, high- quality graphene can be obtained quickly and at low temperatures for transparent electrode applications on GaN LEDs.

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