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Conferences > CLEO_SI > 2020 > SM3M > SM3M.6

Towards a Hexagonal SiGe Semiconductor Laser.

M.A.J.v. Tilburg, A. Dijkstra, E.M.T. Fadaly, V.T. v. Lange, M. A. Verheijen, J.R. Suckert, C. Rodl, J. Furthmuller, F. Bechstedt, S. Botti, D. Busse, J.J. Finley, E.P.A.M. Bakkers, and J.E.M. Haverkort

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Abstract

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5 pm.

© 2020 The Author(s)

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