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Conferences > CLEO_SI > 2020 > SM1Q > SM1Q.2

Strain Induced Indirect-Direct Bandgap Transition in Bilayer MoTe2

Yueyang Yu and C. Z Ning

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Abstract

We experimentally demonstrate an indirect to direct bandgap transition on bilayer MoTe2 by strain engineering. By applying 0.58% tensile strain, photoluminescence intensity is increased by 2.22 times, and linewidth is reduced by 36%.

© 2020 The Author(s)

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