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Strong Enhancement of THz Emission in a Metal-Graphene-Silicon Heterostructure

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Abstract

We report a THz emitter based on a simple metal-graphene-silicon heterostructure, and demonstrate an enhancement of the amplitude by a factor of 80 over its graphene-free counterpart with no tradeoff in bandwidth or SNR. The enhancement is due to an increased carrier collection efficiency by the graphene layer.

© 2020 The Author(s)

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