Abstract

By utilizing homo-epitaxially formed (111)-faceted silicon hollow structures on U- shaped patterned silicon on insulator (SOI) substrates, 1310 nm and 1510 nm InAs quantum dot (QD) fabry-perot and microdisk lasers are achieved on such platform, which paves a promising way to realize silicon-based light source for silicon photonic integration.

© 2020 The Author(s)

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More Like This
InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Wen-Qi Wei, Ting Wang, and Jian-Jun Zhang
M2I.2 Asia Communications and Photonics Conference (ACPC) 2018

O-band InAs/GaAs quantum Dot Micro-disk Lasers on SOI by Hybrid Epitaxy

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STu3N.4 CLEO: Science and Innovations (CLEO_SI) 2019

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