Abstract
InGaN/GaN multiple quantum well LED structure was studied for the possible integration as a detector in future power electronics applications. The electroluminescence (EL) and spectral response were measured from 77 K to 800 K.
© 2020 The Author(s)
PDF ArticleMore Like This
Abbas Sabbar, Syam Madhusoodhanan, Sattar Al-Kabi, Binzhong Dong, Jiangbo Wang, Shui-Qing Yu, and Zhong Chen
JTh2A.79 CLEO: Applications and Technology (CLEO:A&T) 2018
A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell
STh1C.7 CLEO: Science and Innovations (CLEO:S&I) 2017
Cheng-Yen Chien, Meng-Hsin Chen, Chia-Wei Pai, Yu-Jen Lee, Chiu-Chang Huang, Vin-Cent Su, and Chieh-Hsiung Kuan
STu3P.6 CLEO: Science and Innovations (CLEO:S&I) 2020