Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

Yiyin Zhou; Yiyin Zhou; Huong Tran; Huong Tran; Wei Du; Jifeng Liu; Greg Sun; Richard Soref; Joe Margetis; John Tolle; Yong-Hang Zhang; Baohua Li; Mansour Mortazavi; Shui-Qing Yu

doi:10.1364/CLEO_AT.2020.JM2E.1

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper JM2E.1
•https://doi.org/10.1364/CLEO_AT.2020.JM2E.1

Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

Yiyin Zhou, Huong Tran, Wei Du, Jifeng Liu, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Yong-Hang Zhang, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Symp: SiGeSnPb and Related Compounds: from Mid Infrared Photonics to Quantum Materials and Devices (JM2E)

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Y. Zhou, H. Tran, W. Du, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, Y. Zhang, B. Li, M. Mortazavi, and S. Yu, "Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper JM2E.1.

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Abstract

We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 µm, and photodetectors with spectral response cutoff at 3.65 µm and 300 K. Latest progress on electrically injected lasers will also be reported.

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