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Carrier Mobility and Conduction Anisotropy of Silicon by Sub-Bandgap Time-Resolved Terahertz Spectroscopy

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Abstract

Low density charge mobility from below-bandgap, two-photon photoexcitation of silicon is interrogated using time-resolved terahertz spectroscopy yielding high mobility values and directional conduction anisotropy contrasted with traditional Hall and single photoexcitation metrics.

© 2019 The Author(s)

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