Abstract

We experimentally demonstrate an all-optical static Random-Access Memory (RAM) cell using a monolithic integrated InP Flip-Flop and a fast strongly-saturated push-pull SOA-MZI Access-Gate, reporting 10Gb/s error-free Write/Read operation and the fastest RAM cell to date.

© 2019 The Author(s)

PDF Article
More Like This
Optical Static RAM Cell Using a Monolithically Integrated InP Flip-Flop and Wavelength-Encoded Signals

S. Pitris, C. Vagionas, G. T. Kanellos, R. Kisacik, T. Tekin, R. Broeke, and N. Pleros
Tu2K.7 Optical Fiber Communication Conference (OFC) 2016

First Demonstration of an Optical Content Addressable Memory (CAM) Cell at 10 Gb/s

S. Pitris, C. Vagionas, P. Maniotis, G. T. Kanellos, and N. Pleros
M3E.5 Optical Fiber Communication Conference (OFC) 2016

All-optical Ternary Content Addressable Memory (T-CAM) Cell for ultra-fast Address Look-ups in Router Applications

G. Mourgias-Alexandris, C. Vagionas, A. Tsakyridis, P. Maniotis, and N. Pleros
STh3B.7 CLEO: Science and Innovations (CLEO_SI) 2018

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription