Large area uniform graphene was directly grown on insulating substrate by cross-linked Parylene graphitization. The as-grown graphene was used for the fabrication of graphene-Si Schottky junction photodetector with a responsivity of 275.9 mA/W.

© 2019 The Author(s)

PDF Article
More Like This
GaAs-Nanowire-Array/Graphene Schottky Diodes for Photodetection

Yao Wu, Xin Yan, Bang Li, Yanbin Luo, Qichao Lu, Xia Zhang, and Xiaomin Ren
Su4K.1 Asia Communications and Photonics Conference (ACPC) 2017

Low power saturation of waveguide-integrated graphene-silicon Schottky diode on micro-ring resonator

Yi Wang, Zunyue Zhang, Yaojing Zhang, Ming Feng, and Hon Ki Tsang
S4H.4 Asia Communications and Photonics Conference (ACPC) 2019

Synthesis of Graphene Layers by Inductive Coupled Plasma Enhanced Chemical Vapor Deposition (ICP-CVD) for Application in Optoelectronics

Aye Aye Thant, Dae-Yool Jung, Jung-Yong Lee, and Sung-Yool Choi
PW2D.3 Photonics for Energy (PFE) 2019


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription