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Conferences > CLEO_SI > 2019 > STh3O > STh3O.1

External Quantum Efficiency of Monolayer MoTe2 based Near-Infrared Light Emitting Diodes

Jiabin Feng, Yongzhuo Li, Song Fu, Jianxing Zhang, Zizhao Zhong, Hao Sun, Lin Gan, and C.Z. Ning

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Abstract

We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10−4 ~ 5×10−3 at 5~300K.

© 2019 The Author(s)

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