Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

50 Gb/s PAM4 Low-Voltage Si-Ge Avalanche Photodiode

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate a 50 Gb/s PAM4 operation of an integrated Si-Ge APD with low breakdown voltage of -10 V. The receiver has achieved -17 dBm optical input power at 50 Gb/s PAM4 with a bit error rate of 2.4×10-4.

© 2019 The Author(s)

PDF Article
More Like This
35Gb/s Ultralow-Voltage Three-Terminal Si-Ge Avalanche Photodiode

Binhao Wang, Zhihong Huang, Xiaoge Zeng, Di Liang, Marco Fiorentino, and Raymond G. Beausoleil
Th3B.2 Optical Fiber Communication Conference (OFC) 2019

A 25Gbps low-voltage Waveguide Si-Ge Avalanche Photodiode

Zhihong Huang, Cheng Li, Di Liang, Kunzhi Yu, Charles Santori, Marco Fiorentino, Wayne Sorin, Samuel Palermo, and Raymond G. Beausoleil
STh4E.6 CLEO: Science and Innovations (CLEO:S&I) 2016

High-Speed Low-Voltage Waveguide-Integrated Ge-on-Si Avalanche Photodiodes

Jin Zhang, Ana Pejkic, Bill Ping-Piu Kuo, and Stojan Radic
STh3O.2 CLEO: Science and Innovations (CLEO:S&I) 2020

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.