Electro-Optical Bistability in Semiconductor Laser

Curtis Wang; Milton Feng; Nick Holonyak

doi:10.1364/CLEO_SI.2018.SW4Q.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper SW4Q.2
•https://doi.org/10.1364/CLEO_SI.2018.SW4Q.2

Electro-Optical Bistability in Semiconductor Laser

Curtis Wang, Milton Feng, and Nick Holonyak

CLEO: Science and Innovations 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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Novel Semiconductor Emitters (SW4Q)

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C. Wang, M. Feng, and N. Holonyak, "Electro-Optical Bistability in Semiconductor Laser," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper SW4Q.2.

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Abstract

Optical bistability in a single semiconductor transistor laser are realized and demonstrated based on the modulation of cavity photon density via the base quantum-wells for photon-generation and collector intra-cavity photon assisted tunneling for photon-absorption.

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