Abstract

In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm-1.63 μm) of InAs/In0.25Ga0.75As quantum dots (QDs) epitaxially grown on Ge and U-shape Si (001) substrates by solid-source molecular beam epitaxy (MBE) are reported. By hybrid III-V/IV epitaxial growth, ultra-thin and anti-phase domains (APD) free III-V materials are achieved on Ge and U-shape Si substrates. Step-graded InGaAs metamorphic buffer layers are applied to reduce the strain in InAs QDs in order to extend the emission wavelength. At last, a high quality InAs/In0.25Ga0.75As QD structures on Ge and Si substrates are obtained, which exhibit strong C/L-band emission centered at the wavelength of 1.6 μm with a full-width-half-maximum (FWHM) of 57 meV at room temperature.

© 2018 The Author(s)

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