Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Gain Characterization and Parameter Extraction of 1.3 μm InAs Quantum Dot Lasers on Silicon

Not Accessible

Your library or personal account may give you access

Abstract

We report the current and wavelength dependence of gain and transparency current for a variety of quantum dot laser structures. The dependence on number of quantum dot layers and templates for growth are reported.

© 2018 The Author(s)

PDF Article
More Like This
Investigation of Temperature-dependent Lasing and Optical Gain Characteristics of 1.3-μm InAs Quantum Dot Laser

Chongyang Liu, Rui Wang, Hong Wang, Qianqian Meng, and Kian Siong Ang
ATh3A.4 Asia Communications and Photonics Conference (ACP) 2014

Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

B. I. Akca, A. Dana, A. Aydinli, M. Rossetti, L. Li, A. Fiore, and N. Dagli
CD_16 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007

1.3-μm InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Bonding

Yuan-Hsuan Jhang, Katsuaki Tanabe, Satoshi Iwamoto, and Yasuhiko Arakawa
SW3F.4 CLEO: Science and Innovations (CLEO:S&I) 2015

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.