High Q Integrated Photonic Microresonators on 3C SiC-on-Insulator Platform

Tianren Fan; Hesam Moradinejad; Xi Wu; Ali A. Eftekhar; Ali Adibi

doi:10.1364/CLEO_SI.2018.SW4A.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper SW4A.2
•https://doi.org/10.1364/CLEO_SI.2018.SW4A.2

High Q Integrated Photonic Microresonators on 3C SiC-on-Insulator Platform

Tianren Fan, Hesam Moradinejad, Xi Wu, Ali A. Eftekhar, and Ali Adibi

CLEO: Science and Innovations 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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High-Q Microcavities (SW4A)

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T. Fan, H. Moradinejad, X. Wu, A. A. Eftekhar, and A. Adibi, "High Q Integrated Photonic Microresonators on 3C SiC-on-Insulator Platform," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper SW4A.2.

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Abstract

We report for the first time the fabrication of high-Q SiC resonators on a 3C SiC-on-insulator platform (with no undercutting) formed using direct wafer bonding. We demonstrate Q of 42,000 for a 20 µm radius microdonut resonator with a great potential for higher Qs by chemical-mechanical polishing.

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