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Conferences > CLEO_SI > 2018 > SW3Q > SW3Q.3

Quadruple reduction of threshold current density for micro-ring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, and John E. Bowers

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Abstract

A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

© 2018 The Author(s)

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